Hi Bill,
As far as I know, F-containing plasma chemically attacks
Mo, as would attack silicon-based materials. My goal is to attack
silicon-based materials but not Mo. I know Cl-containing plasma etches Si,
Si3N4, SiO2, but what about Mo? Thanks for answers.
Isaac
On Tue, 13 Jan 2004, Bill Moffat wrote:
> Isaac,
> Why use Cl a dangerous gas that requires a lot of safety precautions.
Any Fluorine containing gas will attack any silicon compound. This CF4,SF6,
both common and relatively safe gasses to use. I am not sure but I suspect that
a fluorine containing plasma will not attack Mo.
> hope this helps Bill Moffat
>
> -----Original Message-----
> From: Isaac Wing Tak Chan [mailto:[email protected]]
> Sent: Monday, January 12, 2004 2:14 PM
> To: General MEMS discussion
> Subject: [mems-talk] Does Cl-containing plasma attack Mo?
>
>
> Dear all,
>
> Could someone tell me whether Cl-containing plasma attack Mo or
> not? If there is a reference that directly talk about that, would you
> please let me know? My goal is to have a plasma that would attack silicon,
> silicon nitride, and silicon oxide, but would not attack Mo, at least not
> by RIE. Would Cl-containing plasma achieve this purpose? I do not see any
> reference that talk about etching Mo with Cl-containing plasma. Thanks for
> your help.
>
>
> Yours sincerely,
>
> Isaac Chan
>
> Ph.D. Candidate
> Dept. Electrical & Computer Engineering
> University of Waterloo
> 200 University Ave. W
> Waterloo, Ontario, Canada
> N2L 3G1
> Tel: (519) 888-4567, ext. 6014
> Fax: (519) 746-6321
> [email protected]
> http://www.ece.uwaterloo.ca/~a-sidic
>
>
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>
Yours sincerely,
Isaac Chan
Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3G1
Tel: (519) 888-4567, ext. 6014
Fax: (519) 746-6321
[email protected]
http://www.ece.uwaterloo.ca/~a-sidic