Hi,

one way to start is to set the F/C ratio of your feed gas mixture to about 3
or less, set a moderate to high dc bias (70-140V), and low pressure (5-10
mTorr). Reduce SF6 contend, add Ar, for instance SF6/CHF3/Ar. If your
equipment allows chilling, try setting a low sample temperature.
Exact process parameters depend on your equipment, your sample and mask
design, and the required depth of etching.

Regards, Burkhard

-----Ursprüngliche Nachricht-----
Von: Jörg Paschke 
An: [email protected] 
Datum: Monday, February 16, 2004 11:49 PM
Betreff: [mems-talk] good process to manufacture vertical walls in Si


>Hi,
>
>I´m looking for a good RIE process to get vertical walls in Si with an
>aluminium mask. Is there somebody who have experiences or some good
>parameters to etch silicone.
>
>Etching gases : SF6,CHF3,CF4,Ar,O2
>
>Thanks in advance
>
>___________________
>best regards
>Jörg Paschke
>ICQ. 139350091
>____________________________
>
>_______________________________________________
>[email protected] mailing list: to unsubscribe or change your list
>options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing services.
>Visit us at http://www.memsnet.org/
>