Hi, I think data sheet recommend O2/CF4 mixture. I etched PT 2562 before:
    gas flow O2:CF4=20:4
    pressure 10mT( your pressure is too high, it will be too slow)
    300W

----- Original Message -----
From: "ASIC Hello" 
To: 
Sent: Thursday, February 19, 2004 3:36 AM
Subject: [mems-talk] problem with polyimide ashing


> Hi all,
>
> I am trying to ash polyimide PI2610 patterns using
> Plasma-finish asher. My polyimide patterns are 50 um x
> 50 um and about 2.2 um thick. Masking layer for
> polyimide is SiNx layer. However ashing process seems
> to be slow (60 ~ 90 minutes). My recipe is:
>
> O2 400 sccm
> N2 50 sccm
> Pressure 200 Pa
> Power 400 W .
>
> In additionally, thin film of 1200 A of gold beneath
> PI2610 is etched. There is black residue on gold film.
>
> Could anyone advice me a better PI ashing recipe,
> which can prevent gold layer and ash PI2610 faster?
>
> Thank in advance
>
> Chi Anh
>
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