Hi,

Adding CF4 has little effect on the rate. I suggest you lower pressure
to around 100 mTorr. And in my experience, cathode and anode
temperature greatly affect the ashing rate. In the machine I'm using
the appropriate temperature is 40-45C for cathode and 20-25C for anode.

Regan Nayve

-----------------------------------------------------
Date: Thu, 19 Feb 2004 00:36:37 -0800 (PST)
From: ASIC Hello 
Subject: [mems-talk] problem with polyimide ashing
To: [email protected]
Message-ID: <[email protected]>
Content-Type: text/plain; charset=us-ascii

Hi all,

I am trying to ash polyimide PI2610 patterns using
Plasma-finish asher. My polyimide patterns are 50 um x
50 um and about 2.2 um thick. Masking layer for
polyimide is SiNx layer. However ashing process seems
to be slow (60 ~ 90 minutes). My recipe is:

O2 400 sccm
N2 50 sccm
Pressure 200 Pa
Power 400 W .

In additionally, thin film of 1200 A of gold beneath
PI2610 is etched. There is black residue on gold film.

Could anyone advice me a better PI ashing recipe,
which can prevent gold layer and ash PI2610 faster?

Thank in advance

Chi Anh