--- Eric Miller  wrote:
> You should see if you can heat the substrates to
> >200 deg C in the plasma
> chamber.  This will greatly accelerate the ash
> process.
>
> Eric Miller
> WTC Microfab Lab
> http://microfab.watechcenter.org

----- Original Message -----
Hi all,
I am trying to ash polyimide PI2610 patterns using
Plasma-finish asher. My polyimide patterns are 50
um x 50 um and about 2.2 um thick. Masking layer for
polyimide is SiNx layer. However ashing process seems
to be slow (60 ~ 90 minutes). My recipe is:
O2 400 sccm
N2 50 sccm
Pressure 200 Pa
Power 400 W .

In additionally, thin film of 1200 A of gold beneath
PI2610 is etched. There is black residue on gold film.
Could anyone advice me a better PI ashing recipe,
which can prevent gold layer and ash PI2610 faster?

Thank in advance

Chi Anh

----------------

Dear Eric,

I have checked our system. Maximum chamber temperature
is 100 C. We currently set temperature at 70 deg C. Do
you have any other advice to my mentioned polyimide
ashing problem ?

Chi Anh


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