Dear Chi Anh,

Polyimide ashing takes long. I've tried ashing PI 2610 and have got some
good results. It is covered with nitride. You did not mention anything about
temperature - and try breaking up the cycle so that your wafer does not heat
up. I used 125 W - and only O2 gas for ashing for a period of 20 min.
intervals for like 20 hrs with good results. If you want I can share my
results. Do let me know if you need any further assitance. I believe you
have been using too much of power.


Regards,

Aasutosh Dave

NanoFab Center
Arlington, TX


>From: ASIC Hello 
>Reply-To: General MEMS discussion 
>To: [email protected]
>Subject: [mems-talk] problem with polyimide ashing
>Date: Thu, 19 Feb 2004 00:36:37 -0800 (PST)
>
>Hi all,
>
>I am trying to ash polyimide PI2610 patterns using
>Plasma-finish asher. My polyimide patterns are 50 um x
>50 um and about 2.2 um thick. Masking layer for
>polyimide is SiNx layer. However ashing process seems
>to be slow (60 ~ 90 minutes). My recipe is:
>
>O2 400 sccm
>N2 50 sccm
>Pressure 200 Pa
>Power 400 W .
>
>In additionally, thin film of 1200 A of gold beneath
>PI2610 is etched. There is black residue on gold film.
>
>Could anyone advice me a better PI ashing recipe,
>which can prevent gold layer and ash PI2610 faster?
>
>Thank in advance
>
>Chi Anh
>
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