Dear MEMS colleagues,

within my project I have to fabricate Si-square-structures with the
dimensions of approximately 200x200nm and the depth of 200nm. My experience
in RIE of Si is zero.
we have the oxford Plasmalab 80 Plus machine and within my standard process
I use CHF3 and O2.
I am looking for some papers where I could find information about:
- etching rate as a function of gas mixture, temperature, pressure etc.
- selectivity according to used mask (metal, resist etc.) and process
parameters
- sidewall profile control (I need to have somewhat declined sidewalls)

I will be vary thankful for any kind of information.

Best regards

Josef Kouba
AZM-BESSY
Albert-Einstein-Strasse 15
12489 Berlin
Germany