Hi, all!

I'd like to use RIE to pattern Poly-Si without damaging the SiO2, vice versa.
Does anybody know what recipe provides higher selectivity between Poly-Si and
SiO2 in RIE process, including the gases flow rate and their mixture, pressure,
power, and corresponding etching rate? Our RIE system only provides SF6, SiCl4,
CHF3, N2, CF4, O2. Please tell me the suitable RIE recipes for both Poly-Si and
SiO2 etching if possible. Thank you very much.

Good luck to everyone~!!

Y.C. Lin

Dept. of Power Mechanical Engineering,
National Tsing Hua University, Taiwan.