Leidong Mao,
I am not sure as to the resistance these resists have to BOE or plasma etch, but
the Clariant AZ6000 series is a nice negative resist to use if you have never
processed with negatives before. The primary reason is that the process
chemistries are the same as common positive photoresist chemistries, so switch
over is simplified. The resist itself uses PGMEA as the casting solvent, can
use any of the standard positive resist EBR materials (from Clariant, these
would be AZ EBR - PGMEA solvent - and EBR 70/30 - a combination of PGME and
PGMEA).
The recommended developer is AZ300MIF, which is a pretty standard TMAH based
developer used for many positive resists.
Best Regards,
Chad Brubaker
EV Group invent * innovate * implement
Technology - Tel: (602) 437-9492, Fax: (602)437-9435 e-mail:
[email protected], www.EVGroup.com
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-----Original Message-----
From: [email protected] [mailto:mems-talk-
[email protected]] On Behalf Of Leidong Mao
Sent: Thursday, March 18, 2004 1:42 PM
To: [email protected]
Subject: [mems-talk] recommends for negative resist?
Hi All,
I am about to do KOH etch on <100> silicon wafer,
the feature size is about 50um. I am planning to use
silicon oxide as mask for KOH etch. Due to the mask, I
have to use negative photoresist to pattern the oxide.
Since I have no much experience in negative resist,
could you guys recommend some resist for me? The specs
are: silicon oxide ~1um, the spin-on resist should
withstand HF etching, exposure wavelength
350nm~450nm,feature size ~50um. Thanks.
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