Hello Kristie,

What is you exposure method (contact, projection, stepper...) and dose?
Your coat and develop recipe sounds OK.  Are you sure your wafers are
"clean."  Even new wafers right out of the box are not always clean.

Mike

-----Original Message-----
From: Kristie A Henchir [mailto:[email protected]]
Sent: Thursday, March 18, 2004 4:28 PM
To: [email protected]
Subject: [mems-talk] losing features during development


Hi Everyone,

 I am trying to create 15 - 100 micron line widths on a silicon wafer
using AZ4620. The hard part is that I would like the resist thickness to
be around 20 microns. I use the recipe below but find that the smaller
features (15 and 20 microns) delaminate from the wafer during
development. I would appreciate any input/advice you might be able to
give regarding this problem.

1. Clean and dehydrate wafer for 15 min at 120C  2. Spin HMDS at 3000
rpm for 30 sec (we do not have vapor priming capabilities) 3. Spin
AZ4620 at 3000 rpm for 30 sec  4. wait 5 min  5. softbake at 110C for 5
min  6.
spin second layer of resist at 3000 rpm for 30 sec  7. wait 5 minutes
8.
bake for 5 min at 110C  9. wait 1 hour before exposure 10. develop with
AZ 400K diluted 1:4 (development takes 3 minutes) I appreciate your
input. Sincerely, Kristie



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