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MEMSnet Home: MEMS-Talk: PSG etch rate in HF:H2O
PSG etch rate in HF:H2O
2004-03-19
Paul Vescovo
2004-03-22
Hong Wu
2004-03-22
Kirt Williams
PSG etch rate in HF:H2O
Kirt Williams
2004-03-22
Yes. For Berkeley PSG (similar P content), unannealed, I measured ER = 1.5
um/min in 10:1 HF.
    --Kirt Williams

----- Original Message -----
From: "Paul Vescovo" 
To: 
Sent: Friday, March 19, 2004 3:10 AM
Subject: [mems-talk] PSG etch rate in HF:H2O


Dear all,

There is a critical flaw on devices I worked out recently.
A possible explanation for it is the complete etching of 1.8um of PSG (6%P)
during a RCA (15s in HF(49%):H2O 1:10 at 20°C).

Is this hypothesis sensible ?

Thank you,


paul



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