Hello everybody,

  We have an RIE system with ICP source (Phantom II made by Trion
Technologies) in our lab. We use CF4 to etch silicon substrates or
polysilicon films, but we can also use SF6, if necessary.

  I want to see if anybody with experience in etching high aspect ratio
structures in RIE systems (not DRIE) can let me know how deep we can
etch a silicon/polysilicon film using our system with almost vertical
sidewalls? Also, I would appreciate it if anybody could suggest a good
etching recipe.

  The minimum feature size on our masks is about 2um (for both gaps and
linewidth), and we would like to etch 5-10um films.

  Any help/advice is highly appreciated.

  Best Regards,
  Behraad Bahreyni