Mr. Yao:
        Hot H2PO4 is a standard way for Nitride wet strip. When heat to 180C, it
removes Nitride quickly and has a selectivity over SiO2>50, i.e., very
little SiO2 etch rate. But one thing needs to keep watch is the water
content. If water got fully depleted, the temperature become hard to control
and silicon will be attacked.

Hong Wu

-----Original Message-----
From: [email protected]
[mailto:[email protected]]On Behalf Of Qing
Yao
Sent: 2004Äê4ÔÂ1ÈÕ 8:43
To: MEMS-talk
Subject: [mems-talk] how to remove Silicon Nitride


Hi,


I was wondering if H3PO4 (at between 160 to 180 degrees centigrade) can
remove Silicon Nitride without attacking Silicon Dioxide. Are there any
other methods I could use?


Best Regards,


Qing Yao
___________________
M&IE @ UIUC


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