Phosphoric Acid at 165*C will etch CVD and LPCVD Silicon Nitride at between 40 -
50 A/min depending on your deposition conditions.  CVD Oxide is a good masking
layer for wet nitride etch and you could expect a 1/40 to 1/50 selectivity.

Loren St. Clair
Cell: 925-525-4796
Phone: 925-243-3556

 -----Original Message-----
From:   Qing Yao [mailto:[email protected]]
Sent:   Thursday, April 01, 2004 8:43 AM
To:     MEMS-talk
Subject:        [mems-talk] how to remove Silicon Nitride

Hi,


I was wondering if H3PO4 (at between 160 to 180 degrees centigrade) can
remove Silicon Nitride without attacking Silicon Dioxide. Are there any
other methods I could use?


Best Regards,


Qing Yao
___________________
M&IE @ UIUC


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