Hello Dau Thanh Van,

We have been using Techneglas sources for boron diffusion.  You can get more
information on them on at:

http://techneglas.com/web2/products/techprod/techneglas/pdfs/BoronPlus.pdf

--
Shane McColman
Research Professional
NanoFab, University of Alberta
W 1-028 ECERF Building
Edmonton AB, Canada, T6G 2V4

On April 6, 2004 06:15 am, Dau Thanh Van wrote:
> Hello everybody,
>
> I recently tried to lighly diffused silicon by Boron. The expected
> concentration is around 5e17 atoms/cm3. I reduced the temperature to 800C,
> and pre-diffused in 15 minutes. For drive-in, I made at 1100C/30minutes. I
> estimated the concentration should be 1e18 atoms/cm3 by Frick's law.
> However, after the process, I can not measure the sheet resistance of doped
> wafer.
> The based concentration of the n-type wafer is 1e17 atoms/cm3, and I doped
> it succesfully with the prediffusion temperature of 1000C.
> Is boron solubility a problem, or the based concentration too high?
> By the way, I can not dope the silicon by ion implantation method here. I
> really appreciate any ideas or suggestions.
> Best regards
>
>
> ==============
> Dau Thanh Van
> Ritsumeikan Uni.
> ==============
>
>
>
>
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