Hello all,

Our process is having problems with pinholes in our resist layer after
photolithography & we think it may stem from doping.  The n-type wafers as
purchased have a thin layer of LTO, then we dope them with phosphorus, then
photolithography.  One of our techs thinks the phosphorous doping is causing
the oxide layer to absorb moisture, rendering the HMDS prime ineffective.
Does anyone know if this is possible?

Thank you,
Suzanne