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MEMSnet Home: MEMS-Talk: oxide absorbing moisture after doping?
oxide absorbing moisture after doping?
2004-04-07
Suzanne M. Snyder
2004-04-07
Bill Moffat
oxide absorbing moisture after doping?
Bill Moffat
2004-04-07
Suzanne,
         A classic case of over priming.  Reduce the prime time.  I have used
times as short as 10 seconds for heavy phosphorus doping.  Bill Moffat

-----Original Message-----
From: Suzanne M. Snyder [mailto:[email protected]]
Sent: Wednesday, April 07, 2004 11:18 AM
To: [email protected]
Subject: [mems-talk] oxide absorbing moisture after doping?


Hello all,

Our process is having problems with pinholes in our resist layer after
photolithography & we think it may stem from doping.  The n-type wafers as
purchased have a thin layer of LTO, then we dope them with phosphorus, then
photolithography.  One of our techs thinks the phosphorous doping is causing
the oxide layer to absorb moisture, rendering the HMDS prime ineffective.
Does anyone know if this is possible?

Thank you,
Suzanne



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