Dear all,

I try to deposit RuO2 thin films by RF magnetron
sputtering. The target i used is RuO2 metal oxide.
However, most of the articles reported the used of the
target Ru instead of RuO2. Does anybody got the
experiences or ideas about the parameters (Ar/O2
ratios, annealing temperature etc)to deposit RuO2
films with low resistivities and good thermal
stability by using RuO2 as target sputtering? The RuO2
film is going to apply as the bottom electrode for the
ferroelectric thin films.

Thanks for all!

from ,
Chong Cheong Wei

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