Hi,


I need to do isotropic dry etch of Si using RIE system (to release a Nickel
structure on Si substrate). I am thinking about using Sulfur Hexafluoride
(SF6). However, I don't have a recipe for it.

If somebody has the information about the recipe (e.g., pressure, gas flow,
RF power, etch rate...), would you please let me know? By the way, the
machine I am using is PlasmaLab Dual-Chamber RIE.

If I couldn't get a recipe, is the following one a good start point?
pressure: 100 mTorr
gas flow: 50 sccm
RF power: 50 W

Thanks!



Best Regards,


Qing Yao
___________________
M&IE @ UIUC