Hello Qing,

I have released electroplated Ni structures on Si using 40 % wt. KOH
solution heated to 80 deg C. The structures were coated in a 2 um layer of
gold on the top surface. There was no significant loss of thickness measured
after 4-5 hours etching. KOH will of course attack metals, however, it
appears that it is highly selective to Si over Ni.

Regards, Michael

>From: "Qing Yao" 
>Reply-To: General MEMS discussion 
>To: "MEMS-talk" 
>Subject: [mems-talk] etch Si without attacking Ni
>Date: Mon, 12 Apr 2004 17:31:26 -0500
>
>Hi,
>
>
>I have a Nickel structure built on Si substrate using electroless plating.
>I
>was wondering what etchant I could use to etch Si without attacking Ni so
>that the Ni structure can be released from the Si substrate.
>
>I'm thinking about using KOH. Does anybody know if KOH will attack Ni? If
>so, what is the etch rate? Are there any other choices of etchants (e.g.,
>EDP, HNA)?
>
>Thanks!
>
>
>
>Best Regards,
>
>
>Qing Yao
>___________________
>M&IE @ UIUC
>
>
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