Dr. Bondavalli,

One question I would initially ask: Is the total area sufficient to maintain the
bond through the dicing process.  SEM inspection should be used as a resource to
determine if 1) the bond never occurred (alignment, insufficient max temp or
pressure) 2) the failure occurred as a result of adhesion or co-adhesion 3) if
the failure is occurs at the substrate.  Dependant on that data you should be
able to trouble shoot the TCB failure mode.

Hope this helps,

Loren St. Clair

 -----Original Message-----
From:   Paolo Bondavalli [mailto:[email protected]]
Sent:   Tuesday, April 20, 2004 7:34 AM
To:     [email protected]
Subject:        [mems-talk] thermocompression bonding

Hi all MEMS experts!

We are trying to perform thermocopression bonding using Karl Suss Wafer
bonder and I'd like to compare our data..
We would like to try to bond two wafers where we grew, using
electolitique growth, some Au "pillars" of different dimensions :
100X100µm², 150X150µm², 200X200µm².
The pillars thickness is around 2µm.
I used a recipe which reaches a temperature of 350°C applying a pressure
of 5 bars but it doesn't work.
The two wafers don't endure to the dicing process.
Do you think that the problem is related to the process for growing the
Au?
Is the e-beam better that electrolitique growth?
Or is simply a question of temperature?

thank you very much for suggestions.
Bye

*********************************************************
Dr. Paolo Bondavalli
R&D MEMS Engineer
MICROTEC MEMS
THALES (ex THOMSON-CSF) CORPORATE RESEARCH CENTER
Domaine de Corbeville,
Route Departementale 128
F91404 ORSAY
(FRANCE)
Tel : 01 69 33 08 63
Fax : 01 69 33 08 62
Email : [email protected]
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