Ti, can be etched in a SF6-plasma. We sometimes do this, using a
parallel-plate reactor. We use a SF6-flow of 50sccm, pressure is 50mTorr and
75W RIE-power. We achieve an etchrate of 50-60nm/min.
Good luck,

Jason

___________________________________________________________
Jason Viotty
Process Engineer
C2V
http://www.c2v.nl
___________________________________________________________



-----Original Message-----
From: Greg Chance [mailto:[email protected]]
Sent: donderdag 15 april 2004 18:13
To: [email protected]
Subject: [mems-talk] Ti RIE


Hi everyone

Would anyone be able to tell me the recipe for dry etching titanium, i.e.
what gas, pressure, plate etc? I need to etch 200 nm which has been
evaporated on a GaAs substrate.

regards
Greg Chance
Bath University Physics Dept.

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