Hi all,
I'd like to operate my device underwater (and most likely saline solution), thus
I need to deposit a passivation layer so that it would protect metal (aluminum)
and the silicon substrate itself. Currently, I have 2500 Angstrom of nitride in
mind (after reading some literatures, I know that nitride is probably the best
passivation scheme in this case). Does anybody know any reference/paper/info on
the thickness of nitride needed in order for the nitride layer to be a good
passivation layer for the metal and the silicon underneath it? Thank you so much
and I greatly appreciate your help and info.

Alvin



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