Dear Sir
I do IL with 325nm HeCd laser
The structure of sample we use is PR/SiN(400nm)/ARC/Si
PR --> TOK THMR-iN, or Shipley Ulra-i 123
ARC--> Brewer Science XHRiC
Our target is 2D lattice pillars or holds (period 350 nm,diameter 100nm)
Afrer exposed and developed, The photoresist profile is not that good
The most important problem, side wall is tilted at an angle.
I would like to know if there is any solution?
Any batter photoresist or trick?
Thank you

Best Regard