Hello everyone,

I need to etch a 5kA layer of CVD oxide and not punch through a thin (300A)
layer
of gold (on 200A Ti).

We have tried running a fairly polymerizing C4F8 chemistry at low (150W) bias,
but
it is still punching through the gold layer (with 20% overetch)

Has anyone come across this problem before ? We'd like to stay with RIE if
possible.

As always, many thanks folks.

-neo man



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