Hi,


I was wondering if some one can tell me the typical etch rate of LPCVD
Silicon Dioxide (LTO, deposited at 420 degrees centigrade) using buffered HF
as etchant. One book (Fundamentals of Microfabrication, by Marc Madou) says
it is 0.48 micron/min. But it seems that in my experiment, it etches much
faster than that (maybe close to 1 micron/min.). Please let me know if you
have any suggestions or comments about this. Thanks!


Best Regards,


Qing Yao
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M&IE @ UIUC