This may have been mentioned already, but you can also try BCl3 if you have
it available. We have had similar problems etching GaN using Cl/Ar
chemistry. I have solved the problem by etching in two steps, where the
first step is just BCl3 for 1 minute (to cleanly etch off the surface
layer), then the second step is the Cl2/Ar step. It works like a charm.
Just BCl3 doesn't etch fast enough (for GaN, anyways), while just Cl2/Ar
etches very roughly. The 2-step process works like a charm.
For GaAs, BCl3 alone should etch the material just fine. If the rate is not
as fast as you would like, you can try either a 2-step process as mentioned
above, or else try Cl2/BCl/Ar mixtures for a 1-step process.
-Bill Lanford-Crick
Hello,
I'm trying to etch by RIE very deep pillars (16 um) in a GaAs/AlGaAs
superlattice (30% Al content) with SiCl4/Cl2/Ar sources.
The result is often not very good since sometimes I have filaments with
a resulting rough surface. I've been told that one problem could be an
excess of Cl in the mixture but its reduction did not lead always to
better results.
Do you have some ideas?
Is it maybe a kind of contamination or leak in the chamber?
Thank you
Lorenzo
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