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MEMSnet Home: MEMS-Talk: Re: Plasma activation for Wafer Bonding
Re: Plasma activation for Wafer Bonding
2004-05-21
BRIAN DOUGLAS
Re: Plasma activation for Wafer Bonding
BRIAN DOUGLAS
2004-05-21
Chuan Seng,

  1. Typically if you are doing a plasma assisted direct bond with Oxide wafers,
you will need to consider a chemical clean (SC1/SC2)

  2. From personal experience, best bond results come from Chem clean w/DI rinse
-> Plasma activation -> DI megasonic clean -> bond initiation -> anneal

  3. Typically the most critical aspect is exposure time.  However, the type of
plasma tool you are using will dictate the parameters needed.

  If you would like, we could run some samples for you using our SOI bonding
equipment.  Please contact me directly with questions.

Best Regards,

Brian Douglas
Suss Microtec Inc.
Applications Engineer - Bonders
Phone: (802) 244 - 5181 x202
Fax:  (802) 560 - 0001



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