You should have separate chamber for both Ti and TiN due to the following
reasons;

1. The target to wafer spacings/distances are generally different for both Ti
and TiN films.
2. TiN process generate more particles than Ti.
3. You can have a single chamber for both Ti and TiN. But after each run, you
have to do conditioning/pasting of the chamber for other process.



Wi Li  wrote:
Hi.


We need suggestion from you about Ti and TiN process. We are working in new
wafer fabrication factory and having engineer team from vender installing our
sputtering machine. This sputtering machine has 4 chamber, one for etching and 3
for sputtering. We decided to use one for Al sputtering. However, we cann’t
decide how to use other 2 chamber.



1. We use Ti and TiN in separated chamber.

First chamber: Ti

Second chamber: TiN





2. We use Ti and TiN in the same chamber for both.

First chamber: Ti and TiN

Second chamber: Ti and TiN



In my openion, the first one should be better because it isolate two processes,
which are faster, easier and cleaner (less contamination).



Does anyone have any idea? I really want the opinions from you.



Thank you a lot for every opinion.



Wichet L.

TMEC, NECTEC

[email protected]






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