How slow do you want to go?  Madou notes conc. HF to have the very slow rate of
0.3A/min at 25C on n0type Silicon in the 1-1-1 direction.  If you want something
faster than that, you should apply a dilute HNA (HF+Nitric+Acetic) to the
problem.

Neal




Qing Yao  wrote:
Hi,


I plan to use HF (or buffered HF) to do a very small amount of isotropic
etch of single crystal Silicon to remove the surface roughness after DRIE
(BOSCH process). Does anybody have a recipe (solution formula, etch rate...)
for that? Also, please let me know if there are other methods which can be
used to make the surface smoother. Thanks!



Best Regards,


Qing Yao
___________________
M&IE @ UIUC


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