Hello Yi,
SF6/O2 would be my preferred chemistry. You will have to define the
optimal SF6/(SF+O2) ratio for your reactor. Since Nitride etc is
sensitive to temperature you could also try to raise the wafer
temperature. This also means that you can keep the RIE power low.
Another alternative would be the CF4/CHF3/O2 chemistry. The use of the
CHF3 is mainly to for the anisotropic profile control. Also here you
will have to define the correct ratio's experimentally.
Best regards,
Marc V. C.
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