Hi,

I want to etching a polymer layer using RIE, and the mask patent of the
polymer layer is negative photoresist. Because this both layer is polymer
material. If i use gas O2 to etching the polymer, it also will etch the
photoresist.

Does any body have this experience, what is the gas and parameter of RIE
you using.

Please advise. Thanks.

Regards,
Heng