Hi Josef,

        When you say stripes of 20-50um thick, do you mean linewidth of
20-50um? If so, I assume you are making in periodic line-and-space
(grating) pattern. You can make multiple scribe line cuts on the backside
of your Si wafer and then do your normal lithography process.  The SU-8
line patterns should be perpendicular to the scribe lines on the backside.
At the end, you use a very clean and high grade cloth to cover the SU-8
side of your wafer, then take a roller (a round pencil may do) and gently
roll across the wafer. The cleave cuts should be quite sharp, clean, and
simple in this way. Not all of the samples would look good, but there
should be at least one that is fine by chance.


Isaac

On Wed, 9 Jun 2004, Josef Kouba wrote:

> Dear colleagues,
>
> anyone knows how to prepare following sample?
>
> material: soft-baked SU-8 resist (>1mm) on top of an Si wafer (500 um)
> sample form: stripes 20 - 50 um thick, cutting plane perpendicular to the
> wafer (total size of a sample = (Si thickness + resist thickness) x 20 - 50
> um)
> special requirements: minimal heat production during the sample preparation
>
> classical saw technique will probably not work because of the heat
>
> Does anyone have any suggestions or does anyone know somebody who could
> help?
>
> Thanks a lot
>
> Best regards
>
> Josef Kouba
> BESSY GmbH, AZM Group
> Albert-Einstein-Strasse 15
> 12489 Berlin
> Tel.: +49 30 6392 3125
> Fax.: +49 30 6392 4682
> [email protected]
> www.azm.bessy.de
>
>
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Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3G1
Tel: (519) 888-4567, ext. 6014
Fax: (519) 746-6321
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