Hi to all,

   Can anybody suggest me on this problem...i deposited first Ni(40nm) and then
Au(80nm) on both Si and p-GaN under high vacuum after patterning for the Lift-
off process...but at the time of Lift-off the whole deposited metal got stripped
off...actually after deposition at room temperature i just heated the sample in-
situ (in vacuum) at 100C for one hour...Is this the problem of sticking of Ni
with Si and p-GaN or some other problem...Actually i want to make ohmic contact
to p-GaN by Ni/Au as metal system...Suggest me...

Thank You

Hare Krishna

M.Tech Student, IIT Kanpur




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