>I am trying to sputter thick Cu ( 1 um) in a DC sputtering system.my
 >sputtering conditions are as follows :-
 >base pr- 10 exp(-6) torr
 >chamber pr -10 m torr
 >Ar gas flow - 10 sccm.
 >power - 250 W
 >Target to substrate distance - 5 cm.
 >
 >my problem is that the resistivity of my deposited Cu is very high (24
 >micro ohm cm) which is about 15 times the bulk resistivity of Cu( 1.6
 >micro ohm cm).

With your base pressure level and low power, dep. time is very long
and a lot of contaminants get incorporated in the film. Leading edge
CMOS fabs use b.p. <1E-8 torr, 5-10kW power. Even then, as-deposited
Cu resistance is higher than bulk (~2.5µOhmcm), subsequent anneal will
reduce it to <2µOhmcm.

best regards,
klaus

--
Klaus Beschorner
Metron Technology Europe, PVD (Eclipse) Process Manager
Drosselweg 6,71120 Grafenau,Germany. Tel +49-7033-45683