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MEMSnet Home: MEMS-Talk: Backside Oxidation remove for DRIE
AlN dry etching
2004-07-19
Yeswanth Rao
2004-07-20
William Lanford-Crick
2004-07-20
Kamal Yadav
Intellisense Doubt :)
2004-07-20
Sudhanshu Garg
Backside Oxidation remove for DRIE
2004-07-21
Z.,W.Y.(Lydia)
2004-07-21
[email protected]
Backside Oxidation remove for DRIE
[email protected]
2004-07-21
Hi Lydia,

First, SiO2 at the backside can be used as etching stop layer, and
secondly, if you remove all SiO2 at the backside, may be it will induce a
curved wafer due to the bilayer SIO2/Si; it depands on the SiO2 mask area.

Olivier



> Dear all,
>
> I oxidized silicon (1 micron)for DRIE. Do I have to remove the sio2 at
> the  backside? or it does not matter?
>
> Thanks,
>
> Lydia
>
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