Vladimir,
In my experience, grinding of SiC is the standard method for backthinning.
However, due to the fragility of the material, it is necessary to attach the
material to some sort of carrier substrate prior to the back thinning process;
otherwise, the SiC wafer would easily break in response to any experienced
stress. Another necessary step would be to be able to remove this carrier at a
later point for singulation and packaging of the devices.
EVG has developed an automated method with which to perform this temporary (i.e.
reversible) bonding and debonding process. Our system is capable of utilizing a
variety of bonding methods to achieve the desired results. We have also
developed a debonding system to compliment the bonding system, allowing the
capability to remove the carrier and handle the fragile released substrates.
Best Regards,
Chad Brubaker
EV Group invent * innovate * implement
Technology - Tel: (602) 437-9492, Fax: (602)437-9435 e-mail:
[email protected], www.EVGroup.com
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-----Original Message-----
From: [email protected] [mailto:[email protected]] On
Behalf Of Krasniansky Vladimir
Sent: Tuesday, August 03, 2004 1:25 AM
To: [email protected]
Subject: [mems-talk] SiC backthinning
Hi all,
I'm looking for SiC backthinning method. Is anyone hear about grinding
of SiC? Is there other options except grinding or lapping?
Sincerely,
Vladimir Krasniansky,
Process Engineer,
Gal-El (MMIC);
100, Yitzhak Hanassi Blvd., P.O. Box 330 Ashdod 77102, ISRAEL.
Tel 972-8-857-2436/4
Fax 972-8-857-2658
[email protected]
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