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MEMSnet Home: MEMS-Talk: LOR stripping while protecting Al
LOR stripping while protecting Al
2004-08-09
Borski, Justin
2004-08-09
William Lanford-Crick
2004-08-10
Paul Monaghan
LOR stripping while protecting Al
Borski, Justin
2004-08-09
Bill,

Usually, using acetone with LOR is a bad idea, if fact, I believe the vendor
will tell you that LOR and acetone are incompatible?

You should be able to lift off the film using NMP at 50 to 70 degrees C, and
that will strip the LOR material as well during the same operation.

-Justin

-----Original Message-----
From: William Lanford-Crick [mailto:[email protected]]
Sent: Sunday, August 08, 2004 5:30 PM
To: General MEMS discussion
Subject: [mems-talk] LOR stripping while protecting Al


Hi,
I've seen previous posts regarding the attack of Aluminum by common
developers.  I am using a bilayer resist for lift-off which is S1813 on
LOR-5B.  I need a chemical that can strip the LOR-5B without damaging the
Aluminum.

After metal deposition (which includes Al), I do the lift-off with Acetone
which works just fine.  Now I need to strip the LOR-5B.  I can use the 319
developer to etch LOR-5B but it is TMAH-based and thus etches the Aluminum.
Typically, I have a very thick edge-bead of LOR-5B which requires several
minutes of soaking in 319 dev. to remove.  This seems to really degrade the
Aluminum layer.

What can use I use to strip LOR-5B without damaging the aluminum layer?
Will NMP attack the aluminum?
Thanks!

Bill

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