At 04:57 PM 11/10/98 +0530, you wrote:
>Hello,
>       Can somebody tell me a way to ensure complete removal of KOH ions after
etching Si in KOH solution.

Do you mean kristallisation of KOH on the Si surface? A isotropic HF echt
could help. If you receive any other suggestions, I'll be gratefull if you
could let me know.

Kind regards,

Johan.
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Ir.Ing. Johan E. van der Linden

University of Gent (Belgium)
Department of Information Technology (INTEC)
St-Pietersnieuwstraat 41                B-9000 Gent
Tel +32 9 264 89 33        Fax +32 9 264 35 93

e-mail: [email protected]
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