Most wafers come with doping, either p-type or n-type, with a specified
resistivity.  There are standard tables for converting the resistivity to a
concentration.

The question is, how accurate do you need the doping to be?  You can measure
the resistivity easily and cheaply by doing a four point measurement. (This
measurement can be made more easily with ohmic contacts, which you can make
by putting a piece of Aluminum foil on the wafer and putting it on an
electric stove burner turned all the way up.  If it doesn't alloy, a propane
torch will provide enough extra heat to do the trick.)




David Nemeth
Senior Engineer
Sophia Wireless, Inc.
14225-C Sullyfield Circle
Chantilly, VA
Ph: (703) 961-9573 x206
Fax:(703) 961-9576

-----Original Message-----
From: [email protected]
[mailto:[email protected]]On Behalf Of Sarah C Mcquaide
Sent: Monday, August 09, 2004 6:45 PM
To: [email protected]
Subject: [mems-talk] doped pieces of Si





Does anybody know whether anyone manufactures Si wafers that are p- and
n-type doped completely through the total thinkness of the wafer? The
thickness of the wafer does not matter to me; I need to make small
(micron-sized) dopes Si "powder", and thus would like to buy pre-doped
wafers to grind up. Alternatively, has anyone heard of doping micron-sized
Si pieces in a furnace, and whether there are any problems with doing this?

Thanks!
Sarah McQuaide
Research Engineer
University of Washington Genomation Lab

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