Hi ?,

TiO2 is easily etched in CHF3 or SF6 plasmas. The large bias voltage when
using CHF3 usually requires a hard metal mask (tungsten, molybdenum, ...)
and is not applicable to PR. With SF6 I reached selectivities larger than
10:1 using postive PR on sputtered TiO2.

Greetings,

Stefan.





王孝忠 
Gesendet von: [email protected]
08.09.2004 05:58
Bitte antworten an General MEMS discussion


        An:     
        Kopie:
        Thema:  [mems-talk] Dry etch TiO2


Hi.

Does anybody know how do  dry etch TiO2? I use PR as hard mask. But if I
use CF4+O2, the PR will be etched faster than TiO2, besides the etch rate
of TiO2 is much slower. How can I raise the etch rate?

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