For wet etch Si3N4, you can try ~140C H3PO4

--- Sampo Tuukkanen 
wrote:

> Hi,
>
> I would like to wet etch Si3N4 (LPCVD) to prevent
> the damages of silicon surface during RIE.
> BHF seems to be quite slow to that.
>
>
> Best regards,
>
> Sampo Tuukkanen, NanoScience Center, Jyväskylä.
>
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