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MEMSnet Home: MEMS-Talk: setting up and optimizing a SF6 RIE process. Hints?Parameters to start with?
setting up and optimizing a SF6 RIE process. Hints? Parameters to start with?
2004-09-27
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setting up and optimizing a SF6 RIE process. Hints?Parameters to start with?
2004-09-28
Shile
setting up and optimizing a SF6 RIE process. Hints?Parameters to start with?
Shile
2004-09-28
Pure SF6 will tend to result in an isotropic etch profile. I have never
tried adding Ar, but this may increase anisotropy.  You should be able
to achieve nearly vertical sidewalls by adding O2 to the SF6.  The
SF6/O2 etch will tend to have "grass" that may be undesirable.  After
adjusting the SF6/O2 ratio to get the desired sidewall profile, you can
clean up the grass with the addition of CHF3. With a capacitively
coupled RIE you can expect etch rates of 1,000 to 5,000 Angstroms per
minute.  This technique, called "The Black Silicon Method", is discussed
in a series of papers by Henri Jenson from University of Twente.

Roger Shile


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