Dear Mems colleagues,

I am trying to figure out the dependence of the etching parameters of an RIE
etching process on anisotropy. My device will be etched in silicon and the
process has to be strongly anisotropic for an optical application. Furthermore
it is no binary structure, so that etching of gradients is a problem.
Are there any studies of this topic (parameter dependences)? Can you recommend
me any free simulation software for the RIE process?

Please kindly advise. Many thanks in advance.

Best,
Christiane Rieger, graduate student,
Chemnitz, Germany