Patrick,

I cannot comment as to the "scraper" method of SU-8 deposition, as I have always
applied the material via spin coating (which can be used to apply even 1mm
films, using SU-8 100).

However, as to the develop, it should be performed at room temperature.  The
bake would be used after the develop to cause any residual solvent to evaporate
off.

Best Regards,
Chad Brubaker

EV Group       invent * innovate * implement
Technology - Tel:  480.727.9635, Fax:  480.727.9700  e-mail:
[email protected], www.EVGroup.com

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 -----Original Message-----
From:   [email protected] [mailto:[email protected]]  On
Behalf Of tida
Sent:   Thursday, September 30, 2004 9:34 PM
To:     [email protected]
Subject:        [mems-talk] Coating and develope process of ultra-thick film su8

Hi,

I am trying to coat a 1mm thick su-8 film.

(# A new fabrication process for ultra-thick microfluidic
microstructures utilizing SU-8 photoresist #)
(http://mml.es.ncku.edu.tw/study/ Result/9-page/SU-8_che-hsin.pdf)


1. coating process

Accoding to the journal , the teflon scraper used to spread the su-8
film at a temperature of 80 degree celcius. ( After pouring the su-8
on the substrate )
So , is that means do it on the hot plate?
And what is this step for? ( Since the su-8 will self-planarized
during baking process )

2. develope process

"the substrates were developed using pure PGMEA with gentle ultrasonic
agitation and then baked at 90 degree celcius for 10 mins to remove
the residue organic solvent."

there is a few button on the ultrsonic agitator
temperature , time , ultrasonic (low , middle ,high).

does it mean develope the unwanted su-8 in ultrasonic bath with PGMEA
at 90 degree celcius for 10 min?

Or does it mean developed in the ultrasonic agitator and then baked on
th hot plate at 90 degree celcius for 10 mins?

confuse :(


thanks in advance.

best rgds,
patrick
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