PhoeniX, BV supplies chrome photomasks to customers worldwide, and is based in
Enschede, the Netherlands. Their website is www.phoenixbv.com, and they also
have local distributors around the world.
----- Original Message -----
From: [email protected]
Date: Monday, October 4, 2004 12:01 pm
Subject: MEMS-talk Digest, Vol 24, Issue 4
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Today's Topics:
1. An epoxy for DRIE (Krasniansky Vladimir)
2. Photomask makers (Michael L)
3. micropyramidal hillocks on KOH etched {100} silicon surfaces
(Qing Yao)
4. Re: R?p. : [mems-talk] Metal Lift off using LOR 20 B and
Shipley 1813 (dipankar ghosh)
5. RE: Metal Lift off using LOR 20 B and Shipley 1813
(dipankar ghosh)
6. Re: micropyramidal hillocks on KOH etched {100} silicon
surfaces (Joolien Chee)
7. Tungsten Etch without etching Silicon (Menn, Steven)
8. Oxidation rate of amorphous si? (Raj Kumar)
Hi Nicolas,
I use 353ND by Epoxy Technology, USA for mounting of wafers, and the
stack pass all operations (litho, chemical etches, evaporation and
sputtering properly). We not use DRIE, but I think it will be OK.
Sincerely,
Vladimir Krasniansky,
Process Engineer,
Gal-El (MMIC);
100, Yitzhak Hanassi Blvd., P.O. Box 330 Ashdod 77102, ISRAEL.
Tel 972-8-857-2436/4
Fax 972-8-857-2658
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Hi Everyone,
Can anyone recommend a reliable photomask making service in Europe. I know
of Delta Mask and Compugraphics - any others?
Please send any replies directly to me at: [email protected]
Many thanks,
Michael
_________________________________________________________________
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Hi,
During the KOH etch on {100} silicon surfaces, lots of micropyramid hillocks are
formatted. I was wondering if there is any effective method that can be used to
get a smooth and pyramid free etched surface. I used 30% w/w KOH and IPA and did
the etch at 80C. Please let me know if you have any comments or suggestions.
Thanks!
Best Regards,
Qing Yao
___________________
M&IE @ UIUC
Hello Laetita,
First of all thank you very much for your prompt reply. I am using
Microchem LOR 20 B along with Shipley 1813 . Do
you think it is possible to get 2 um Cu lift off on 5 um features using LOR 20
B and Sphipley 1813 PR .Please let me know ,
Thank you very much,
Sincerely,
Dipankar Ghosh
----- Original Message -----
From: "Laetitia Philippe"
Date: Tue, 28 Sep 2004 16:42:15 +0200
To:
Subject: Rép. : [mems-talk] Metal Lift off using LOR 20 B and Shipley 1813
> Hi Dipankar,
>
> which can of solution is this commercial product? what is the
> composition of your feature above the Cu/Cr layer?
>
> Dr Laetitia Philippe
> Electrochemistry and Micro-patterning Group
> EMPA
>
> Feuerwerkstrasse 39
> CH-3602 Thun
>
> Tel 41 (0)332285249
>
> >>> [email protected] 09/28 5:11 am >>>
> Hi all,
> I am trying to do a lift off of 2 um Cu / 200 A Cr layer with 5
> um features using a bi layer lift off process using Microchem LOR 20 B
> and Shipley 1813. Does anybody have any experience using this .Could you
> pls share your process details.
> Also what are the limitations of aspect ratio on bi layer
> photolithography process? Is it possible to do 3 um features of 2 um
> thick metal using this process.
> Thanks in advance,
> Dipankar Ghosh
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Hello Bill
First of all thank you very much for your prompt reply. Really
appreciate it. Could you pls write in detailed steps about
the process flow so that I can try it ( for ex > spinning speed and baking time
and temp . , exposure time details.).Also do you
use LOR 20 B . Do you think it is possible to get 2 um Cu lift off on 5 um
features using LOR 20 B and Sphipley 1813 PR
...The substrate I use is polycrystalline alumina .Please let me know ,
Thank you very much,
Sincerely,
Dipankar Ghosh
----- Original Message -----
From: "Bill Moffat"
Date: Tue, 28 Sep 2004 09:07:50 -0700
To: "General MEMS discussion"
Subject: RE: [mems-talk] Metal Lift off using LOR 20 B and Shipley 1813
> Dipankar,
> I will try to reach you directly. The MEMS reply format does not
lend itself to long explanations. Short answer think 1.2
micron thick resist and 0.1 micron features. With 5 microns of resist 0.5
microns should be easy. Bill Moffat
>
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Hi,
There are plenty of literature which suggest adding chemicals to
prevent formation of hillocks. I suggest Petersen's Bulk Micromachining
review paper.
Best, Joolien
On Oct 3, 2004, at 4:48 PM, Qing Yao wrote:
> Hi,
>
>
> During the KOH etch on {100} silicon surfaces, lots of micropyramid
> hillocks are formatted. I was wondering if there is any effective
> method that can be used to get a smooth and pyramid free etched
> surface. I used 30% w/w KOH and IPA and did the etch at 80C. Please
> let me know if you have any comments or suggestions. Thanks!
>
>
>
> Best Regards,
>
>
> Qing Yao
> ___________________
> M&IE @ UIUC
> _______________________________________________
> [email protected] mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/
Dear All,
I am looking for a fairly selective process (5: or better) to strip
patterned Tungsten without etching too much silicon. Does anyone know
of any dry/wet etch options? Thank you.
Steve
-------------------------------------------------
Steven Menn, Research Assistant
Boston University Photonics Center
8 Saint Mary's Street
Boston, MA 02215
email: slavam AT bu.edu
Hello All!
I am looking for oxidation rate of amorphous silicon in dry and
wet ambients. Oxidation rate of a-Si is expected to be
fast than crystalline and poly silicon, however, some supporting
data and/or some reference will be helpful. Can anybody provide?
RAJKUMAR
India
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