Dear all,

I am thinking on using TiO2 as a dielectric film for capacitors. I have been
reading some articles and I found more bibliografy about Ta2O. It seems like if
Ta2O5 were more popular than TiO2 for capacitors. Do you know why does it
happen? According to what I read, I understand that the dielectric constant of
the TiO2 can vary in a wide range of values. Why is it so changeable? Does it
depend on the rutile or anatase fase of the dioxide?

I want to deposite TiO2 following a LPCVD process. I was thinking on using TiCl4
as a precursor gas but I don´t know if I need any other gas to transport it into
the chamber, neither the concentration of TiCl4. Has any of you ever worked in
this area? Could you suggest me any basic step as starting point?

Thank you for your help,

Ana.