Hello,

For a MEMS die bonding application, we need to plate 2um of Au onto a flat
silicon die cap that has TiAu (800A /1500A) E-beam deposited onto the SiO2
surface layer.  We are attempting to electroplate gold onto the entire
surface, i.e. no photoresist mold.  When we have the current set low, we
only get gold plated in a few islands.  When we increase the current until
we start getting uniform plating on the entire surface, we soon get one or
more black spots that grow in size and limit the plating.  Any suggestions?

Sincerely,

Robert Dean
Auburn University