Though I haven't deposited TiO2, I once worked on a TiSi PECVD Process.
In this case we had the best results transporting the TiCl4 to the
reactor without a carrier gas.  We may have increased the vapor pressure
by heating the TiCl4 to something less than 100 degC.  We previously
tried using a carrier, perhaps N2 or Ar. In this case liquid TiCl4 was
injected into the reactor, which ended up frying the pump.

For an oxidizer, O2 may be too reactive.  N2O might be an alternative,
or water vapor.

Roger Shile

-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of Sancho, Ana
Sent: Wednesday, October 06, 2004 4:44 AM
To: [email protected]
Subject: [mems-talk] TiO2

Dear all,

I am thinking on using TiO2 as a dielectric film for capacitors. I have
been reading some articles and I found more bibliografy about Ta2O. It
seems like if Ta2O5 were more popular than TiO2 for capacitors. Do you
know why does it happen? According to what I read, I understand that the
dielectric constant of the TiO2 can vary in a wide range of values. Why
is it so changeable? Does it depend on the rutile or anatase fase of the
dioxide?

I want to deposite TiO2 following a LPCVD process. I was thinking on
using TiCl4 as a precursor gas but I don´t know if I need any other gas
to transport it into the chamber, neither the concentration of TiCl4.
Has any of you ever worked in this area? Could you suggest me any basic
step as starting point?

Thank you for your help,

Ana.
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