Hi all,
As a follow up to the above question , does ashing the sample with the PR
in an Oxygen plasma help in the lift off
process ( by cleaning up the remnant undesireable PR that is left).
Please let me know,
Thanks
Dipankar
----- Original Message -----
From: "dipankar ghosh"
Date: Mon, 11 Oct 2004 10:18:50 -0500
To: "General MEMS discussion"
Subject: [mems-talk] Problems with thermal evaporation
> Hi all ,
> I have some problems with thermal evaporation. I am trying to do a
lift off of Cu / Cr top electrodes using LOR
5A
> and Shipley 1813 bi layer stack.I am doing in situ Cr sputtering and then Cu
evaporation without breaking vacuum.
> I see that during the lift off process the metal patterns peel off. I get good
lift off of 0.25 um Cu/ 200 A Cr. However
> when I do 0.5 um Cu/ 200 A Cr , I do not get good yield on the devices ( most
of it peels off ).
>
>
> My queries are :-
>
> (1) What is the typical adhesion layer thickness used ? ( is thinner layer
better for any reason).
>
> (2) Does Ti work any better than Cr.
>
> (3) For doing Cu deposition is it better to do in steps of 0.25 um rather than
one long run.
>
> My deposition conditions are are follows :
>
> Cu ;-
>
> Base pr - 5.0 exp (-6) torr
> chamber pr - 4.0 exp ( -6 ) torr
> current - 250 A
> Voltage - 1.8 V
>
> Thanks in advance,
> Dipankar
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